Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 2. P. 022-027.
https://doi.org/10.15407/spqeo8.02.022

Inversion asymmetry effect on quantum oscillations in 3D crystals with Cnv symmetry
V.V. Ivchenko1, A.N. Sergeev1, V.S. Elnik1, G.P. Chuiko2

1Kherson State University, Chair of Physics, 27, 40 Rokiv Zhovtnya str., 73000 Kherson, Ukraine Phone: +380-0552-326768, e-mail: ivchenko@ksu.kherson.ua
2Kherson State Technical University, Department of Cybernetics, 24, Beryslavske shosse, 73008 Kherson, Ukraine Phone: +380-0552-326922, e-mail: chuiko@public.kherson.ua

Abstract. The peculiarities of quantum oscillations in bulk semiconductors with Cnv symmetry caused by the lack of their symmetry centre are considered. A quasi-qubic model is used for finding the magnetic levels. The algorithm for numerical calculating the levels in the presence of the tilted magnetic field is suggested. Numerical estimations are performed for Сd3As2 and Cd3-xZnxAs2. It is shown that the most suitable conditions for observing the beating effect in these compounds are the high values of the electron concentrations and small angles between the direction of the magnetic field and crystal symmetry axis.

Keywords: spin splitting of bands, Fermi surface, quantum oscillations, beating effect, node, cadmium arsenide.

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