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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 2. P. 061-065.
Screen-printed p-CdTe layers for CdS/CdTe solar cells
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
45, prospect Nauky, 03028 Kyiv, Ukraine
Abstract. Correlation of the recrystallization process technological parameters with the
morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar
cell fabrication has been established. The optimal regimes to form layers with required
characteristics have been found. As distinct from the used previously screen-printing
techniques for CdS/CdTe solar cell fabrication, CdTe layers were doped with Ag or Au
not by their diffusion from the layer surface but in the course of layer preparation. For
this purpose, tellurides of those metals were added into the raw paste used for CdTe
screen printing. It is shown that the developed method has some advantages and allows
to prepare CdTe films, structural and electrophysical parameters of which are suitable to
fabricate CdS/CdTe solar cells.
Keywords: CdTe, screen printing, crystal structure and symmetry, X-ray diffraction,
solar cell.
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