Semiconductor Physics, Quantum Electronics and Optoelectronics, 9 (2) P. 034-039 (2006).
DOI:
https://doi.org/10.15407/spqeo9.02.034
References
1. S.P. Chin, C.Y. We // IEEE Trans. Electron. Devices 40, No 4, p. 712-720 (1993). https://doi.org/10.1109/16.202782 | | 2. C.S. Chang, D.Y. Day // IEEE Trans. Electron. Devices 36, No 2, p. 269- 280 (1989). https://doi.org/10.1109/16.19926 | | 3. K. Fujii et al. // IEEE Trans. M.T.T. 48, No 3, p. 431-436 (2000). https://doi.org/10.1109/22.826843 | | 4. S.P. Murray, K.P. Roenker // Solid State Electronics 46, p. 1495-1505 (2002). https://doi.org/10.1016/S0038-1101(02)00094-1 | | 5. T.A. Fjedley, T. Yterdal, M.S. Shur, Introduction to device modeling and circuit simulation. Wiley, New York, 1998. | | 6. K.M. Shin, D.P. Klamer, J.I. Lion // Solid State Electronics 35, No 11, p. 1639-1640 (1992). https://doi.org/10.1016/0038-1101(92)90191-E | | 7. C. Leifso et al. // IEEE Trans. Electron. Devices 47, No 5, p. 905-909 (2000). https://doi.org/10.1109/16.841219 | | 8. S. Khemissi, Master thesis. Faculty of Sciences. Constantine University, 2003. | | 9. N. Merabtine, Ph.D thesis. Faculty of Engineering. Constantine University, 2003. | |
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