Semiconductor Physics, Quantum Electronics and Optoelectronics, 10 (2) P. 021-025 (2007).
DOI:
https://doi.org/10.15407/spqeo10.02.021
References
1. http://www.grc.nasa.gov/www/SiC (internet information). | | 2. S.C. Kim, W. Bahng, N.K. Kim, E.D. Kim, T. Ayalew, T. Grasser and S. Selberherr // Materials Science Forum 483-485, p. 793-796 (2005). https://doi.org/10.4028/www.scientific.net/MSF.483-485.793 | | 3. S.I. Vlaskina, Silicon carbide LED // Semiconductor Physics, Quantum Electronics & Optoelectronics, 5(l), p. 71-75 (2002). | | 4. Simulation, devices, and process technology in silicon carbide, research project of the department of microelectronics and information technology, http://www.imit.kth.se//forskningsprojektdetalj.html?projektid=2 | | 5. Dallas Morisette, Mitch McGlothlin, J.A. Cooper, Jr., M.R. Meloch, SiC Shottky barrier diodes development at Purdue // http:/www.enc.purdue.edu/ WBG/Device-research/Shottky-Diodes/index.html | | 6. Diffusion in bulk crystals and heterostructures of compound semiconductors. http://www.unimuenster.de/Rectorat/Forschungsberichte2000/foll gd03.htm | | 7. H. Bracht, N.A. Stolwijk, M. Laube, G. Pensl, Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism // Appl. Phys. Lett. 77, p. 3188-3190 (2000). https://doi.org/10.1063/1.1325390 | | 8. H. Bracht, N.A. Stolwijk, M. Laube, G. Pensl, Modelling of boron diffusion in silicon carbide // Mater. Sci. Forum 353-356, p. 327-333 (2001). https://doi.org/10.4028/www.scientific.net/MSF.353-356.327 | | 9. Doping issues in wide band-gap semiconductors, Exeter, United Kingdom, 21-23 March, 2001. http://widegap2001.ex.ac.uk/sic.html. | | 10. M. Bockstedte, A. Mattausch, and O. Pankratov, Boron diffusion in SiC: the role of intrinsic point defects. http://psi-k.dl.ac.uk/psik2000/abstracts/MichelBockstedte.html. | | 11. Peter Deak, Materials characterization and modeling of SiC in Europe - From the viewpoint of a theorist // Mater. Sci. Forum 483-485, p. 457-464 (2005). https://doi.org/10.4028/www.scientific.net/MSF.483-485.457 | | 12. Birnie, P. Dunbar, A model for silicon self diffusion in silicon carbide: anti-cite defect motion // J. Amer. Ceram. Soc. 69, p. 33-35 (1986) (http://www.mse.arizona.edu/faculty/birnie/abs860 1.html) https://doi.org/10.1111/j.1151-2916.1986.tb04731.x | | 13. S.I. Vlaskina, D.H. Shin, Effect of annealing on the impurities of 6H-SiC single crystals // Jpn J. Appl. Phys. Part 2 -Letters, 38, p. L861-L863 (1999). https://doi.org/10.1143/JJAP.38.L861 | | 14. S.L. Vlaskina, K.W. Kim, Y.S. Kim, Y.P. Lee, G.S. Svechnikov, Optoelectronics devices on silicon carbide // J. Korean Phys. Soc. 30 (910), p. 117-121 (1997). | | 15. P.G. Baranov, I.V. Ilyn and E.N. Mokhov // Solid State Communs 100, p. 371 (1996). https://doi.org/10.1016/0038-1098(96)00425-5 | | 16. A.V. Duijn-Arnold, T. Ikoma, O.G. Poluektov, P.G. Baranov, E.N. Mokhov and J. Schmidt // Phys. Rev. B 57(3), p. 1607 (1998). https://doi.org/10.1103/PhysRevB.57.1607 | | 17. G. Bachelet, G.A. Baraff and M. Schulter // Phys. Rev. B 22, p. 2842 (1980). | | 18. S.T. Pantelides, W.A. Harrison and F. Indurain // Phys. Rev. B 34, p. 6038 (1986). https://doi.org/10.1103/PhysRevB.34.6038 | | 19. H. Kuwabara and S. Yamada // Phys. status solidi (a) 30, p. 739 (1975). https://doi.org/10.1002/pssa.2210300234 | | 20. M. Ikeda, H. Matsunami and T. Tanaka // Phys. Rev. B 22, p. 2842 (1980). https://doi.org/10.1103/PhysRevB.22.2842 | | 21. E.N. Kalabuhova, S.N. Lukin, E.N. Mokhov, J. Reinke, S. Greulich-Weber and J.M. Spaeth // Inst. Phys. Conf. Ser. 142, p. 333-335 (1996). | | 22. W. Suttrop, G. Pensl and P. Lanig // Appl. Phys. A 51, p. 231-237 (1990). https://doi.org/10.1007/BF00324007 | | 23. T. Troffer, Ch. Habler, G. Pensl, K. Holzlein, H. Mitlhner, J. Volki // Inst. Phys. Conf. Ser. 142, p. 281-284 (1996). | | 24. P.G. Baranov and E.N. Mokhov // Inst. Phys. Conf. Ser. 142, p. 293-296 (1996). | |
|
|