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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 2. P. 132-135.
Research of Structural Quality of Big-Size KDP Crystals
STC "Institute for Single Crystals," the NAS of Ukraine
60, Lenin Ave., Kharkiv 61001, Ukraine
E-mail: vilsa@isc.kharkov.ua
Abstract. The faulted structure formation at a rapid growing of big-size KDP crystals has
been analyzed. A transitional zone with high degree of lattice faultness has been revealed
between the seed and the pure zone of the grown crystal by X-ray diffraction methods with
high resolution. It has been determined that, regardless of the seed form, the transitional layer
in grown crystals reaches the value of~12 mm. The nonmonotone variation of the crystal
lattice parameter (∆d/d) within ±2.5·10 -5 and the halfwidth of a diffraction reflection curve
(β = 5.5÷8 arcs for direction [103] and β = 7÷9 arcs for direction [100]) and the increase of
the integral power of reflection of the X-ray beam I R by 1.5 times are observed in the
transitional layer.
Keywords: KDP single crystals, structural quality, X-ray diffraction, crystal lattice
parameter.
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