Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 2. P. 167-170.
https://doi.org/10.15407/spqeo11.02.167


Formation and activation of defects in films of A IV B VI compounds in the process of growing from vapor phase
Ya.P. Saliy, І.М. Freik, V.V. Prokopiv (Jr)

Vasyl Stefanyk Precarpathian National University 57, Shevchenko str., 76000 Ivano-Frankivsk, Ukraine Phone: +380(342) 50-37-52; e-mail: prk@tvnet.if.ua

Abstract. The work has suggested an adequate model describing formation of defects in films of A IV B VI compounds in vapor-phase growth. Being based on this model, it has given an analytical description of dependences for film electrophysical parameters (concentrations n, p and mobilities µ n , µ p of free charge carriers) on technological factors of film growth. We have calculated concentrations of activated and inactivated defects as subject to temperature of film deposition. The developed model enables determination of entropy and enthalpy of defect formation processes.

Keywords: defects, thin film, A IV B VI compounds, film growth.

Full Text (PDF)

Back to N2 Volume 11