Semiconductor Physics, Quantum Electronics and Optoelectronics, 12 (2) P. 143-146 (2009).
DOI: https://doi.org/10.15407/spqeo12.02.143


References

1. A. Fahrenbruch, R. Bube, Solar Devices: Theory and Experiment. Energoatomizdat, Moscow, 1987 (in Russian).
2. D.V. Korbutyak, S.V. Melnychuk, E.V. Korbut, M.M. Borysyuk, Cadmium Telluride: ImpurityDefect States and Detector Properties. Ivan Fedorov, Kyiv, 2000 (in Ukrainian).
3. K.A. Valiev, Yu.I. Pashintsev, G.V. Petrov, Application of Metal-Semiconductor Contacts in Electronics. Sov. Radio, Moscow, 1981 (in Russian).
4. V.I. Strikha, S.S. Kilchitskaja, Solar Cells Based on Metal-Semiconductor Contacts. Energoatomizdat, Leningrad, 1992 (in Russian).
5. E.H. Rhoderick, Metal-Semiconductor Contacts. Clarendon Press, 1978.
6. S.M. Sze, Physics of Semiconductor Devices. Energiya, Moscow, 1973 (in Russian).
7. A. Milnes, D. Feucht, Heterojunctions and MetalSemiconductor Junctions. Academic Press, New York, 1972 (in Russian).
https://doi.org/10.1016/B978-0-12-498050-1.50009-X
8. V.P. Makhniy, N.V. Skrypnyk, Production method of metal - n-CdTe contact. Patent on useful model UA №31891 (25 April, 2008).
9. V.P. Makhniy, Yu.N. Boiko, N.V. Scripnik, M.M. Slyotov, S.V. Khusnutdinov, Effect of oxidation methods applied to cadmium and zinc halogenide substrates on physical properties of heterolayers CdO and ZnO // Proc. SEMST-3, Ukraine, Odessa, 2-6 June, 2008, p. 328.
10. N.V. Demych, O.S. Lytvyn, V.P. Makhniy, M.M. Slyotov, O.V. Stec, Properties of CdTe modified layer // Fizika i khimiya tverdogo tela 3, p. 446-448 (2002) (in Russian).
11. V.P. Makhniy, Physical processes in diode structures based on wide-gap A2B6 semiconductors. Thesis of Dr. Sci., Chernivtsi State University, 1992, p. 293.
12. M. Lampert, P. Mark, Current Injection in Solids. Academic Press, New York, 1970.