Semiconductor Physics, Quantum Electronics and Optoelectronics, 12 (2) P. 173-177 (2009).
DOI: https://doi.org/10.15407/spqeo12.02.173


References

1. D.H. Shin. Technology trends and manufacturing issues of thick-film inorganic EL devices // IDMC2000, p. 201.
2. B. Allieri, S. Peruzzi, L. Antonini, A. Speghini, M. Bettinelli, D. Consolini, G. Dotti, L.E. Depero, Spectroscopic characterization of alternate current electroluminescent devices based on ZnS-Cu // J. Alloys Compounds 341, p. 79-81 (2002).
https://doi.org/10.1016/S0925-8388(02)00071-3
3. N.E. Brese, C.L. Rohrer, G.S. Rohrer, Brightness degradation in electroluminescent ZnS:Cu // Solid State Ionics 123, p. 19-24 (1999).
https://doi.org/10.1016/S0167-2738(99)00091-0
4. S.W. Lee, J.Y. Moon, M.S. Kim, H.J. Yu, H.Y. Han, D.H. Shin and V. Vlaskin, The effect of binding material on the emission characteristic of AC thick film EL devices // IDMC-2000, p. 213.
5. E.F. Venger, A.V. Goncharenko, M.L. Dmitruk, Optics of Small Particles in Dispersion Medium. Naukova Dumka, Kiev, 1999, p. 130 (in Russian).