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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 2. P. 142-144.
Crystal lattice engineering the novel substrates
for III-nitride-oxide heterostructures
1Institute of Microdevices, Kyiv, Ukraine; e-mail: osinsky@ voliacable.com.
Abstract. In this work, we firstly investigated controlling the lattice parameter of III-
oxides used as substrates for III-nitrides heterostructures. It was shown that the atomic
content change in III-sublattice gives large possibilities for precise cation controlling the
lattice parameters. The developed technique is promising to make ideal substrates in III-
nitride epitaxy of LED, LD and transistors with a high quantum efficiency and small
noise. This technology can be realized using MBE, MOSVD or CVD chloride-hydride
epitaxy with computer driving.
Keywords: III-nitrides, III-oxides, cation operation, bandgap, matrix.
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