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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 2. P. 161-165.
Hydrogen gettering in annealed oxygen-implanted silicon
1Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
Phone: +48 22 5487792; fax: + 48 22 8470631;
E-mails: misiuk@ite.waw.pl; barcz@ite.waw.pl; prujsz@ite.waw.pl
Abstract. Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O
prepared by O 2+ implantation at the energy 200 keV and doses 10 14 and 10 17 cm –2 ) was
investigated after annealing of Si:O at temperatures up to 1570 K, including also
processing under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processing
conditions, buried layers containing SiO 2–x clusters and/or precipitates were formed. To
produce hydrogen-rich Si:O,H structures, Si:O samples were subsequently treated in RF
hydrogen plasma. As determined using secondary ion mass spectrometry, hydrogen was
accumulated in sub-surface region as well as within implantation-disturbed areas. It has
been found that hydrogen was still present in Si:O,H structures formed by oxygen
implantation with the dose D = 10 7 cm –2 even after post-implantation annealing up to
873 K. It is concluded that hydrogen accumulation within the disturbed areas in Si:O as
well as in SOI structures can be used for recognition of defects.
Keywords: Cz-Si, implantation, oxygen, hydrogen, high temperature, high pressure,
gettering, defects.
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