Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 2. P. 166-169.
https://doi.org/10.15407/spqeo13.02.166


Zero bias terahertz and subterahertz detector operating at room temperature
N. Momot*, V. Zabudsky, Z. Tsybrii, M. Apats’ka, M. Smoliy, N. Dmytruk

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv; e-mail: momotnatasha@isp.kiev.ua

Abstract. In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound Hg 1-x Cd x Te is presented. The measurements were performed in the temperature range from 77 to 300 K at various operating mode and frequency. The estimated value of the noise equivalent power at room temperature for detector proposed was 1.3·10 –8 W/Hz 1/2 and 5.4·10 –9 W/Hz 1/2 at bias current I = 1 mA and I = 0, respectively.

Keywords: THz radiation, bolometer, hot-carrier effect.

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