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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 2. P. 166-169.
Zero bias terahertz and subterahertz detector operating
at room temperature
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv; e-mail: momotnatasha@isp.kiev.ua
Abstract. In this paper, the experimental study of the terahertz and subterahertz hot
electron bolometer based on narrow-gap semiconductor compound Hg 1-x Cd x Te is
presented. The measurements were performed in the temperature range from 77 to
300 K at various operating mode and frequency. The estimated value of the noise
equivalent power at room temperature for detector proposed was 1.3·10 –8 W/Hz 1/2 and
5.4·10 –9 W/Hz 1/2 at bias current I = 1 mA and I = 0, respectively.
Keywords: THz radiation, bolometer, hot-carrier effect.
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