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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 2. P. 180-185.
Effect of chemical modification of thin C60 fullerene films
on the fundamental absorption edge
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
45, prospect Nauky, 03028 Kyiv, Ukraine
Abstract. Fullerene C 60 films were grown using physical vapor deposition on Si
substrates at room temperature. Then chemical modification with cross-linking these
films was performed using the reaction with 1,8-octanediamine (DA) or octane-1,8-
dithiol (DT). These chemically cross-linked C 60 films are capable of stable binding the
Ag or Au nanoclusters. Optical properties of the obtained nanostructured hybrid films
were investigated by both reflectance spectroscopy and spectral ellipsometry within the
spectral range 1.55 to 5.0 eV at various angles of incidence. From the spectral
dependences of the extinction coefficient in the region of optical absorption edge, the
physical nature of the fundamental allowed direct band-gap transitions between HOMO-
LUMO states E g , the optical absorption edge near the intrinsic transition E o , and
exponential tail of the density-of-states caused by defects have been determined.
Influence of chemical modification and decoration of metal nanoparticles on the above
mentioned parameters has been analyzed.
Keywords: fullerene C 60 films, chemical modification, optical parameters.
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