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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 2. P. 186-188.
Model of heterotransistor with quantum dots
National Technical University of Ukraine “KPI”
37, prospect Peremogy, 03056 Kyiv, Ukraine
E-mail: v.timofeyev@kpi.ua; elena.faleeva@gmail.com
Abstract. Heterostructure transistors with quantum dots (QD) are now very perspective
devices because of their higher velocities of electrons in the channel. Simulation results
for concentration and carrier velocity distributions depending on the QD size,
concentration and location were presented in this paper. It is shown that presence of QD
in the channel causes a significant increase of current. Also, QD location and
concentration influence to the output characteristics of transistor was established.
Keywords: heterostructure transistor, quantum dot.
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