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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 2. P. 214-220.
Band carriers scattering on impurities
from data of high-resolution X-ray diffractometry
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Naukyt, 03028 Kyiv, Ukraine
E-mail: igorboiko@yandex.ru
Phone: 38 (044) 236-5422
Abstract. Mobility of band carriers scattered on donors, partially ionized, partially
neutral, at low temperatures, is considered in general and calculated for AIII-BV group
crystals. It is shown that temperature dependence of mobility is determined by
relationship between number of ionized and neutral donors and by average energy of
electrons.
Keywords: impurities, scattering potential, quantum kinetic equation, mobility.
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