Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 2. P. 130-133.
https://doi.org/10.15407/spqeo17.02.130

                                                                 

Influence of pulse magnetic fields treatment on optical properties of GaAs based films
R.V. Konakova, M.V. Sosnova, S.M. Red’ko, V.V. Milenin, R.A. Red'ko

V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
45, prospect Nauky, 03028 Kyiv, Ukraine Phone: +38 (044) 525-94-64; fax:+38 (044) 525-61-82, e-mail: redko.rom@gmail.com

Abstract. Long-term transformations of the optical reflectance of GaAs epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) have been obtained. Optical measurements were performed within the wavelength range 800...1100 nm at 300 K. Non-monotonous changes of reflectance were observed. Experimental results have been interpreted in terms of diffusion of point defects, resulting from destruction of metastable complexes (probably [VAs +impurity]), from the internal boundaries to the surfaces of the investigated structures. The method for detection of non-equilibrium complexes in multilayer objects has been proposed.

Keywords: optical density, weak magnetic field, impurity-defect composition.

Manuscript received 31.01.14; revised version received 09.04.14; accepted for publication 12.06.14; published online 30.06.14.

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