Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 2. P. 168-173.
https://doi.org/10.15407/spqeo17.02.168

                                                                 

Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals
L. Karachevtseva 1,* , S. Kuchmii2 , O. Kolyadina1 , O. Lytvynenko1 , L. Matveeva1 , O. Sapelnikova1 , O. Smirnov1 , O. Stroyuk 2

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
*Corresponding author phone: +38(044) 525-2309; e-mail: lakar@isp.kiev.ua
2L. Pisarzhevskii Institute of Physical Chemistry, National Academy of Sciences of Ukraine,
31, prospect Nauky, 03028 Kyiv, Ukraine

Abstract. The Si-SiO2 interface in oxidized macroporous silicon structures with surface CdS and ZnO nanocrystals was investigated using the methods of electroreflectance and photoconductivity. The Franz-Keldysh effect, built-in electric field and surface quantization of charge carriers in the Si-SiO2 region were revealed. The splitting of photoconductivity peaks was detected in the area of indirect band-to-band transition due to quantization of charge carriers in the surface silicon region, too. The latter data correlate with the results of the electroreflectance spectra measurements in the area of direct interband transition of oxidized macroporous silicon structures with surface CdS and ZnO nanocrystals.

Keywords: macroporous silicon, Si-SiO2 interface, CdS and ZnO nanocrystals, Franz- Keldysh effect, surface quantization.

Manuscript received 16.01.14; revised version received 23.04.14; accepted for publication 12.06.14; published online 30.06.14.

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