Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 2. P. 179-183.
https://doi.org/10.15407/spqeo17.02.179

                                                                 

Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition
E.O. Melezhik1, J.V. Gumenjuk-Sichevska2, S.A. Dvoretskii3

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine. Corresponding author e-mail: emelezhik@gmail.com; e-mail gumenjuk@gmail.com
2Institute of Semiconductor Physics of SB RAS,
13, pr. Lavrentieva, 630090 Novosibirsk, Russia

Abstract. The band structure and dependences of the intrinsic concentration in the mercury-cadmium-telluride (MCT) Hg0.32Cd0.68Te/Hg1-xCdxTe/Hg0.32Cd0.68Te quantum wells in the framework of the 8 x 8 k.p envelope function method on the well width L and composition x were calculated. Modeling of the energy spectra showed that the intrinsic concentration can vary about an order of magnitude with variation of the well width and chemical composition in the range of x ⟨ 0.16 and well width L ⟨ 20 nm at the liquid nitrogen temperature. These strong variations of the carrier concentration are caused by the insulator-semimetal topological transition.

Keywords: mercury cadmium telluride HgCdTe, quantum well, insulator-semimetal topological transition, hot electron bolometer.

Manuscript received 17.01.14; revised version received 25.04.14; accepted for publication 12.06.14; published online 30.06.14.

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