Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 2. P. 200-204.
https://doi.org/10.15407/spqeo17.02.200

                                                                 

Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing
O.B. Okhrimenko

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukrain
e 41, prospect Nauky, 03028 Kyiv, Ukraine Phone: 38(044) 525-62-61; fax: 38(044) 525-83-42; e-mail: konakova@isp.kiev.ua

Abstract. The experimental data on Raman scattering (RS) and optical absorption in structures with thin silicon layers on various substrates, as well as in multilayer quartz/Si/SiO2 , SiC/Si/SiO2 and glass/Si3N4/Si/SiO2 structures, are summarized. It is shown that laser annealing on the above structures leads to changes in spectra of RS and optical transmission that can be explained within the critical action model. The value of critical action of laser radiation is determined for the structures studied.

Keywords: laser annealing, optical transmission, Raman scattering, thin silicon layers.

Manuscript received 16.01.14; revised version received 23.04.14; accepted for publication 12.06.14; published online 30.06.14.

Full Text (PDF)

Back to Volume 17 N2