|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 2. P. 134-137.
References 1. I. Kuzmina, V. Nikitenko, Zinc Oxide. Production and Optical Properties. Nauka, Moscow, 1984 (in Russian).2. U. Ozgur, Ya.I. Alivov, C. Liu, A. Teke, M.A. Re-shchikov, S. Dogan, V. Avrutin, S.-J. Cho, H. Morkos, A comprehensive review of ZnO materials and devices. Appl. Phys. Rev., J. Appl. Phys. 98, 041301 (1-102), (2005). 3. R.B. Lauer, The IR photoluminescence emission band in ZnO. J. Phys. Chem. Sol. 34, p. 249-253 (1973). https://doi.org/10.1016/0022-3697(73)90084-X 4. Yu.M. Gerbshtein, Ya.M. Zelikin, About red luminescence band in zinc oxide. Optika i Spektroskopiia, 28, p. 521-523(1970), in Russian. 5. V.A. Nikitenko, K.E. Tarkpea, A.S. Tereshchenko, I.P. Kuz'mina, Red luminescence of zinc oxide. Zhurnal Prikladnoi Spektroskopii, 51, p. 986-988 (1989), in Russian. https://doi.org/10.1007/bf00664605 6. L.A. Kappers, O.R. Gilliam, S.M. Evans, L.E. Halliburton, N.C. Giles, EPR and optical study of oxygen and zinc vacancies in electron-irradiated ZnO. Nucl. Instrum. Meth. 266, p. 2953-2957 (2008). https://doi.org/10.1016/j.nimb.2008.03.146 7. V.I. Kushnirenko, I.V. Markevich, T.V. Zashivailo, Acceptors related to group I elements in ZnO ceramics. J. Lumin. 132, p. 1953-1956 (2012). https://doi.org/10.1016/j.jlumin.2012.03.029 8. Yu.M. Gerbshtein, Ya.M. Zelikin, About the origin of the centers of yellow-orange luminescence in zinc oxide. Optika i Spektroskopia, 27, p. 515-518 (1969), in Russian. 9. H.S. Kang, J.W. Kim, S.H. Lim, H.W. Chang, G.H. Kim, J.H. Kim, S.Ye. Lee, Investigation on the variation of green, yellow and orange emission properties of ZnO thin films. Superlatt. Microstructures, 39, p. 193-201 (2006). https://doi.org/10.1016/j.spmi.2005.08.042 10. M. Liu, A.H. Kitai, P. Mascher, Point defects and luminescence centers in zinc oxide and zinc oxide doped with manganese. J. Lumin. 54, p. 35-42 (1992). https://doi.org/10.1016/0022-2313(92)90047-D 11. Ch.H. Ahn, Y.Yi. Kim, D.Ch. Kim, S.K. Mohanta, H.K. Cho, A comparative analysis of deep level emission in ZnO layers deposited by various methods. J. Appl. Phys. 105, 013502 (1-5), (2009). 12. H.C. Ong, G.T. Du, The evolution of defect emissions in oxygen–deficient and –surplus ZnO thin films: the implication of different growth modes. J. Cryst. Growth, 265, p. 471-473 (2004). https://doi.org/10.1016/j.jcrysgro.2004.02.010 13. E.S. Shim, H.S. Kang, S.S. Pang, J.S. Kang, I. Yun, S.Y. Lee, Annealing effect on the structural and optical properties of ZnO thin films on InP. Mat. Sci. Eng. B, 102, p. 366-369 (2003). https://doi.org/10.1016/S0921-5107(02)00622-0 14. Z.W. Li, W. Gao, Growth of zinc oxide thin films and nanostructures by wet oxidation. Thin Solid Films, 515, p. 3323-3329 (2007). https://doi.org/10.1016/j.tsf.2006.09.026 15. S.A. Studenikin, N. Golego, M. Cocivera, Fabri-cation of green and orange photoluminescent undoped ZnO films using spray pyrolysis. J. Appl. Phys. 84, p. 2287-2294 (1998). https://doi.org/10.1063/1.368295 16. L. Cui, H.-Y. Zhang, G.G. Wang, F.-X. Yang, X.-P. Kuang, R.Sun, J.-C.Han, Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0001) substrates by magnetron sput-tering. Appl. Surf. Sci. 258, p. 2479-2485 (2012). https://doi.org/10.1016/j.apsusc.2011.10.076 17. N.O. Korsunska, L.V. Borkovska, B.M. Bulakh, L.Yu. Khomenkova, V.I. Kushnirenko, I.V. Markevich, The influence of defect drift in external electric field on green luminescence of ZnO single crystals. J. Lumin. 102-103, p. 733-736 (2003). https://doi.org/10.1016/S0022-2313(02)00634-8 |