|
Semiconductor
Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N
2. P. 215-219. References 1. I.V. Masol, V.I. Osinsky, O.T. Sergeev, Informational Nanotechnologies. Macros, Kyiv, 2011 (in Russian). 2. V. Osinsky, O. Dyachenko, Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures. Semiconductor Physics, Quantum Electronics & Optoelectronics, 13, No. 2, p. 142-144 (2010). 3. S. Ban, J. Zhang, L. Zhang et al., Charging and discharging electrochemical supercapacitors in the presence of both parallel leakage process and electrochemical decomposition of solvent. Electrochimica Acta, 90, p. 542-549 (2013). https://doi.org/10.1016/j.electacta.2012.12.056 4. Ananta R. Acharya, Group III – Nitride Semiconductors: Preeminent Materials for Modern Electronic and Optoelectronic Applications. The Himalayan Physics, 4(4), p. 22-26 (2013). 5. F.A. Ponce, and D.P. Bour, Nitride-based semiconductors for blue and green light-emitting devices. Nature, 386(6623), p. 351-359 (1997). https://doi.org/10.1038/386351a0 6. Pierre Mars, Coupling a Supercapacitor with a Small Energy Harvesting Source. EE Times Design. http://www.cap-xx.com April, 2014. 7. P. Deminskiy, Selective photosensitivity of integrated RGB and white light sources in reverse mode. in book: Electronics and communications, Vol. 3 "Electronics and nanotechnology", p. 14-18 (2011). |