¹Physical-Technical Institute, Scientific Association “Physics – Sun”, Uzbekistan Academy of Sciences, 2B, Bodomzor Yuli str., 100084 Tashkent, Uzbekistan
²Tashkent State Agrarian University, 2, University Str., 100140 Tashkent, Uzbekistan
³Turin Polytechnic University in Tashkent, 17, Niyazov Str., 100095 Tashkent, Uzbekistan Corresponding author: sapaevibrokhim@gmail.com

Abstract. The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law dependence of the current on the voltage. It is shown that in the area of the sharp increase in current of the current-voltage characteristics, participation of defect-impurity complexes in recombination processes becomes decisive.

Keywords: injection, current-voltage, defect-impurity complexes, bipolar drift length, bipolar diffusion length.

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