Semiconductor Physics, Quantum Electronics & Optoelectronics, 22 (2), P. 188-192 (2019).

Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure
I.B. Sapaev1, B. Sapaev2, D.B. Babajanov3

1Physical-Technical Institute, Scientific Association “Physics – Sun”, Uzbekistan Academy of Sciences, 2B, Bodomzor Yuli str., 100084 Tashkent, Uzbekistan
2Tashkent State Agrarian University, 2, University Str., 100140 Tashkent, Uzbekistan
3Turin Polytechnic University in Tashkent, 17, Niyazov Str., 100095 Tashkent, Uzbekistan Corresponding author:

Abstract. The current-voltage characteristic of an injection photodetector of the In–n-CdS–p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law dependence of the current on the voltage. It is shown that in the area of the sharp increase in current of the current-voltage characteristics, participation of defect-impurity complexes in recombination processes becomes decisive.

Keywords: injection, current-voltage, defect-impurity complexes, bipolar drift length, bipolar diffusion length.

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