Semiconductor Physics, Quantum Electronics & Optoelectronics, 23 (2), P. 193-200 (2020).

Light-emitting properties of BN synthesized by different techniques
G.Yu. Rudko1,2, L.L. Sartinska3, O.F. Isaieva1,2, E.G. Gule1, T. Eren4, E. Altay4

1Institute of Physics, NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine
2National University “Kyiv-Mohyla Academy”, 2, Skovorody str., 04070 Kyiv, Ukraine
3I. Frantsevich Institute for Problems of Materials Science, NAS of Ukraine, 3, Krzhyzhanovsky str., 03680 Kiev-142, Ukraine
4Yildiz Technical University, Chemistry Department, Davutpasa Campus, 34220 Esenler, Istanbul, Turkey

Abstract. Light-emitting properties of boron nitride powders of different morphology grown using various techniques were studied. All samples were hexagonal BN (h-BN), while the content of impurity phases varied considerably. The wide photoluminescence band in the visible range was observed. h-BN synthesized using carbothermal reduction method exhibited the highest efficiency of the photoluminescence emission. The intensity of BN emission has been interpreted in terms of interplay between the emission of intrinsic defects stabilized by carbon, carbon-related recombination centers and the centers of non-radiative recombination caused by the presence of sassolite phases in the samples.

Keywords: boron nitride, nanostructures, XRD, SEM, photoluminescence.

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