@article{Hussain2021spqeo24n2p192,
  title = {Simulation analysis to optimize the performance of homojunction p-i-n In0.7Ga0.3N solar cell},
  author = {Hussain, S. and Prodhan, Md. T. and Rahman, Md. M.},
  journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics},
  volume = {24},
  number = {2},
  pages = {192--199},
  year = {2021},
  doi = {10.15407/spqeo24.02.192},
  url = {https://doi.org/10.15407/spqeo24.02.192},
  abstract = {Simulation analysis has been carried out to determine the perfect structural parameters of homojunction p-i-n In0.7Ga0.3N solar cell to obtain maximum overall efficiency. It has been demonstrated that n-layer of 16-nm, intrinsic layer (i-layer) of 0.5-μm and p-layer of 3-μm thickness with specific doping concentrations of 1·1020 cm–3 for n-layer and 1·1018 cm–3 for p-layer allow us to achieve the maximum efficiency 29.21\%. The solar cell structure provides an open circuit voltage of 1.0 V, short circuit current density of 33.15 mA/cm2 and the percentage of fill factor value of 88.03\%. However, the efficiency drops drastically, if the dislocation density in i-layer is higher than 1·1014 cm–3, and unintentional doping concentration within i-layer is beyond 1.5·1016 cm–3 of the structure.},
  keywords = {InGaN, homojunction, p-i-n solar cell, solar cell capacitance simulator (SCAPS)}
}