TY  - JOUR
TI  - Simulation analysis to optimize the performance of homojunction p-i-n In0.7Ga0.3N solar cell
AU  - Hussain, S.
AU  - Prodhan, Md. T.
AU  - Rahman, Md. M.
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 24
IS  - 2
SP  - 192
EP  - 199
PY  - 2021
DA  - 2021
DO  - 10.15407/spqeo24.02.192
UR  - https://doi.org/10.15407/spqeo24.02.192
N2  - Simulation analysis has been carried out to determine the perfect structural parameters of homojunction p-i-n In0.7Ga0.3N solar cell to obtain maximum overall efficiency. It has been demonstrated that n-layer of 16-nm, intrinsic layer (i-layer) of 0.5-μm and p-layer of 3-μm thickness with specific doping concentrations of 1·1020 cm–3 for n-layer and 1·1018 cm–3 for p-layer allow us to achieve the maximum efficiency 29.21%. The solar cell structure provides an open circuit voltage of 1.0 V, short circuit current density of 33.15 mA/cm2 and the percentage of fill factor value of 88.03%. However, the efficiency drops drastically, if the dislocation density in i-layer is higher than 1·1014 cm–3, and unintentional doping concentration within i-layer is beyond 1.5·1016 cm–3 of the structure.
KW  - InGaN
KW  - homojunction
KW  - p-i-n solar cell
KW  - solar cell capacitance simulator (SCAPS)
ER  -