Semiconductor Physics, Quantum Electronics & Optoelectronics, 25 (2), P. 179-184 (2022).

Field effects in electron-irradiated GaP LEDs

R.M. Vernydub1, O.I. Kyrylenko1*, O.V. Konoreva2, Ya.M. Olikh3, O.I. Radkevych4, D.P. Stratilat5, V.P. Tartachnyk5

1National Pedagogical Dragomanov University, 9, Pyrohova str., 01601 Kyiv, Ukraine
2E.O. Paton Electric Welding Institute, NAS of Ukraine, 11, Kazymyr Malevych str., 03150 Kyiv, Ukraine
3V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine
4SE “SRI of Microdevices” STC “Institute for Single Crystals”, NAS of Ukraine,
3, Severo-Syretska str., 04136 Kyiv, Ukraine
5Institute for Nuclear Research, NAS of Ukraine, 47, prospect Nauky, 03680 Kyiv, Ukraine
*Corresponding author e-mail:

Abstract. The paper presents the results of the study of field effects in non-irradiated and irradiated by electrons (E = 2 MeV, F = 8.2∙1016 cm–2) gallium phosphide (GaP) light emitting diodes (LEDs) under reverse bias. The avalanche multiplication of charge carriers and tunneling breakdown in the space charge region has been considered. An increase of breakdown voltage after electron irradiation has been revealed. The effects of the annealing of non-irradiated and irradiated diodes in the temperature range of 20 to 500 °C have been analyzed.

Keywords: GaP, LED, field effects, electron irradiation, current-voltage characteristics.

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