TY  - JOUR
T1  - Principles of creating the devices that are able to control the current flow in the second class conductors
AU  - Bacherikov, Yu.Yu.
AU  - Okhrimenko, O.B.
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 25
IS  - 2
SP  - 137
EP  - 145
PY  - 2022
DO  - 10.15407/spqeo25.02.137
UR  - https://doi.org/10.15407/spqeo25.02.137
AB  - From the position of conceptions inherent to semiconductor physics and semiconductor technology, the processes occurring in conductors of the second class, which take place due to the current flow in them, have been considered in this paper. It has been shown that using the several composite materials consisting of a porous matrix filled with an electrolyte enables to obtain multilayer structures, in which potential barriers appear in the electrolyte medium. These barriers are caused by the difference in properties inherent to layers of porous matrix. Considered here has been the prospect of creating the new devices based on the second-class conductors capable to control the direction and magnitude of the current flow in these conductors that are in a liquid state (in electrolytes). In other words, it was considered the possibility to obtain the ionic devices that are closest in their functional properties to basic electronic devices, such as diodes, transistors, etc.
KW  - second class conductors
KW  - current flow control
KW  - ionic devices
KW  - potential barriers in the electrolyte
KW  - multilayer porous composite materials
ER  -