@article{Vernydub2022Field,
  author = {Vernydub, R.M. and Kyrylenko, O.I. and Konoreva, O.V. and Olikh, Ya.M. and Radkevych, O.I. and Stratilat, D.P. and Tartachnyk, V.P.},
  title = {Field effects in electron-irradiated GaP LEDs},
  journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics},
  year = {2022},
  volume = {25},
  number = {2},
  pages = {179--184},
  doi = {10.15407/spqeo25.02.179},
  url = {https://doi.org/10.15407/spqeo25.02.179},
  abstract = {The paper presents the results of the study of field effects in non-irradiated and irradiated by electrons (E = 2 MeV, F = 8.2∙10 cm) gallium phosphide (GaP) light emitting diodes (LEDs) under reverse bias. The avalanche multiplication of charge carriers and tunneling breakdown in the space charge region has been considered. An increase of breakdown voltage after electron irradiation has been revealed. The effects of the annealing of non-irradiated and irradiated diodes in the temperature range of 20 to 500 °C have been analyzed.},
  keywords = {GaP, LED, field effects, electron irradiation, current-voltage characteristics}
}