TY  - JOUR
T1  - Field effects in electron-irradiated GaP LEDs
AU  - Vernydub, R.M.
AU  - Kyrylenko, O.I.
AU  - Konoreva, O.V.
AU  - Olikh, Ya.M.
AU  - Radkevych, O.I.
AU  - Stratilat, D.P.
AU  - Tartachnyk, V.P.
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 25
IS  - 2
SP  - 179
EP  - 184
PY  - 2022
DO  - 10.15407/spqeo25.02.179
UR  - https://doi.org/10.15407/spqeo25.02.179
AB  - The paper presents the results of the study of field effects in non-irradiated and irradiated by electrons (E = 2 MeV, F = 8.2∙10 cm) gallium phosphide (GaP) light emitting diodes (LEDs) under reverse bias. The avalanche multiplication of charge carriers and tunneling breakdown in the space charge region has been considered. An increase of breakdown voltage after electron irradiation has been revealed. The effects of the annealing of non-irradiated and irradiated diodes in the temperature range of 20 to 500 °C have been analyzed.
KW  - GaP
KW  - LED
KW  - field effects
KW  - electron irradiation
KW  - current-voltage characteristics
ER  -