TY  - JOUR
AU  - Milenin, G.V.
AU  - Redko, R.A.
TI  - Transformation of defects in semiconductor structures under action of magnetic fields stimulated by drift phenomena
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
PY  - 2023
VL  - 26
IS  - 2
SP  - 147
EP  - 151
DO  - 10.15407/spqeo26.02.147
UR  - https://doi.org/10.15407/spqeo26.02.147
AB  - The phenomenon of directed motion of mobile charged point defects in semiconductor structures under action of magnetic fields has been discussed. The features of defect drift in sign-changing magnetic fields have been studied. The effect of directional movement of charged defects under the combined action of constant and alternating magnetic fields has been analyzed. Analytical relations have been presented for the drift rate of defects in semiconductor structures under given impacts.
KW  - magnetic field
KW  - charged defect
KW  - defect drift
ER  -