Semiconductor Physics, Quantum Electronics & Optoelectronics, 27 (2), P. 130-135 (2024).
DOI: https://doi.org/10.15407/spqeo27.02.130


Metal oxides for electronics and the SPQEO journal

A. Belyaev, Z. Maksimenko & P. Smertenko

V. Lashkaryov Institute of Semiconductor Physics NAS Ukraine
41 Nauky Avenue, 03028 Kyiv, Ukraine
*Corresponding author e-mail: petrosmertenko@gmail.com


Abstract. This article discusses the main trends in the physics and preparation of metal oxides and summarizes the results of research published by SPQEO in this area over the past decade. The main metal oxides studied include ZnO, Zn1-xCdxO, Zn1-xCoxO, MgxZn1–xO, ZnO:Mn, VO2, ZrO2–Y2O3, TiO2, WO3, Gd2O3, Er2O3, WO3–CaO–SiO2–B2O3: Tb3+, Dy2O3, NiO, FexOy, Ga2O3, Al2O3, ITO, Ag2O and graphene oxide. These oxides were obtained by the following methods: sintering in air or in a stream of various gases, magnetron sputtering, atomic layer deposition, explosive evaporation, sol-gel, spin coating, spray pyrolysis, rapid thermal annealing, green synthesis from plant solutions, melt quenching, rapid thermal annealing, self-ignition, ion-plasma co-sputtering, vacuum sputtering, reactive ion beam sputtering, and the Hammer method. The electrical and optical properties of the studied oxides are illustrated.

Keywords:SPQEO journal, semiconductor physics, metal oxide, methods of obtaining metal oxides, electrical characterization, optical characterization.

Full Text (PDF)


Back to Volume 27 N2

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.