Semiconductor Physics, Quantum Electronics & Optoelectronics, 27 (2), P. 184-188 (2024).
DOI: https://doi.org/10.15407/spqeo27.02.184
Fabrication and performance characterization of Sb2Se3-GaSe eutectic systems
Ministry of Science and Education Republic of Azerbaijan, Institute of Physics, Abstract.
Sb2Se3-GaSe eutectic composites were synthesized by the vertical Bridgman method. XRD analysis and structural study of the Sb2Se3-GaSe eutectics showed that Sb2Se3 inclusions were uniformly distributed in the GaSe matrice. Three eutectic points in the Sb2Se3-GaSe system were studied. The compositions of the three eutectics of 80, 55 and 40 wt.% Sb2Se3 formed in the Sb2Se3-GaSe systems, and the corresponding melting points of 776, 725 and 698 K were determined. Anisotropy of the electrical properties of the eutectic systems was observed. The anisotropy degree was ~103 depending on the crystallization direction.
Keywords:XRD, SEM and EDX analysis, differential scanning calorimetry, Raman spectra, eutectic system.
M.V. Kazimov*, G.B. Ibragimov
AZ 1143, Baku, H. Javid ave., 131, Republic of Azerbaijan
*Corresponding author e-mail: mobilkazimov@gmail.com
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.