¹ Taras Shevchenko National University of Kyiv, Physics Faculty, 01601 Kyiv, Ukraine
² College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, P.R. China
*Corresponding author e-mail: serge@szu.edu.cn

Abstract. The data on electron levels induced by defects in In(Ga)As/(In)GaAs nanostructures, their localization, activation energy and identification have been systematically reviewed. Point defects inherent to GaAs and found in the (In)GaAs-based nanostructures have been listed, and their classification has been clarified, including EB3, EL2, EL3, EL4 (M4), EL5, EL6 (M3), EL7, EL8, EL9 (M2), EL10 (M1), EL11 (M0) and M00. The effect of the interfaces on the formation of different types of extended defects has been described. All the levels of electron traps found in heterostructures with quantum wells, wires and dots by deep level spectroscopies have been collected in a table with indication of the detection technique, object, location in the structure and their origin assumed. This overview can be useful as a reference material for researchers who study these nanostructures.

Keywords:InAs/GaAs, nanoheterostructures, defect, electron state, deep level spectroscopy.

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