@article{Milenin2024Quantum,
  author = {G.V. Milenin and R.A. Redko},
  title = {Quantum features of low-energy photoluminescence of aluminum nitride films},
  journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics},
  year = {2024},
  volume = {27},
  number = {2},
  pages = {157--161},
  doi = {10.15407/spqeo27.02.157},
  url = {https://doi.org/10.15407/spqeo27.02.157},
  abstract = {Photoluminescence of aluminum nitride films at the below bandgap excitation has been studied. It has been found that low-energy (up to 2.02 eV) photoluminescence spectra of the AlN films contain a series of equidistant maxima, the intensities of which decrease with energy. Theoretical analysis has shown that the observed photoluminescence features may be caused by strong electron-phonon interaction (long-range interaction of electrons in the band gap with Al3+ ions in the lattice sites). This interaction presumably leads to appearance of quasi-particles in the band gap of AlN, which are a bound state of an electron with an ion in a crystal lattice site. Such quasi-particles have been called “elions”. The energy of an elion is quantized. An elion quantum is equal to the longitudinal optical phonon energy. The low-energy photoluminescence is based on the elion generation and subsequent annihilation mechanism.},
  keywords = {aluminum nitride; photoluminescence; electron-phonon interaction; bound state of electron and ion; quasi-particle; elion}
}