TY  - JOUR
TI  - Quantum features of low-energy photoluminescence of aluminum nitride
      films
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
AU  - Milenin, G.V.
AU  - Redko, R.A.
VL  - 27
IS  - 2
SP  - 157
EP  - 161
PY  - 2024
DA  - 2024
DO  - 10.15407/spqeo27.02.157
UR  - https://doi.org/10.15407/spqeo27.02.157
AB  - Photoluminescence of aluminum nitride films at the below bandgap
      excitation has been studied. It has been found that low-energy (up to
      2.02 eV) photoluminescence spectra of the AlN films contain a series of
      equidistant maxima, the intensities of which decrease with energy.
      Theoretical analysis has shown that the observed photoluminescence
      features may be caused by strong electron-phonon interaction (long-range
      interaction of electrons in the band gap with Al3+ ions in the lattice
      sites). This interaction presumably leads to appearance of
      quasi-particles in the band gap of AlN, which are a bound state of an
      electron with an ion in a crystal lattice site. Such quasi-particles
      have been called “elions”. The energy of an elion is quantized. An elion
      quantum is equal to the longitudinal optical phonon energy. The
      low-energy photoluminescence is based on the elion generation and
      subsequent annihilation mechanism.
KW  - aluminum nitride
KW  - photoluminescence
KW  - electron-phonon interaction
KW  - bound state of electron and ion
KW  - quasi-particle
KW  - elion
ER  -