@article{Kazimov2024Fabrication,
  author = {M.V. Kazimov and G.B. Ibragimov},
  title = {Fabrication and performance characterization of Sb2Se3-GaSe eutectic systems},
  journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics},
  year = {2024},
  volume = {27},
  number = {2},
  pages = {184--188},
  doi = {10.15407/spqeo27.02.184},
  url = {https://doi.org/10.15407/spqeo27.02.184},
  abstract = {Sb2Se3-GaSe eutectic composites were synthesized by the vertical Bridgman method. XRD analysis and structural study of the Sb2Se3-GaSe eutectics showed that Sb2Se3 inclusions were uniformly distributed in the GaSe matrice. Three eutectic points in the Sb2Se3-GaSe system were studied. The compositions of the three eutectics of 80, 55 and 40 wt.\% Sb2Se3 formed in the Sb2Se3-GaSe systems, and the corresponding melting points of 776, 725 and 698 K were determined. Anisotropy of the electrical properties of the eutectic systems was observed. The anisotropy degree was ~103 depending on the crystallization direction.},
  keywords = {XRD; SEM and EDX analysis; differential scanning calorimetry; Raman spectra; eutectic system}
}