TY  - JOUR
TI  - Fabrication and performance characterization of Sb2Se3-GaSe eutectic
      systems
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
AU  - Kazimov, M.V.
AU  - Ibragimov, G.B.
VL  - 27
IS  - 2
SP  - 184
EP  - 188
PY  - 2024
DA  - 2024
DO  - 10.15407/spqeo27.02.184
UR  - https://doi.org/10.15407/spqeo27.02.184
AB  - Sb2Se3-GaSe eutectic composites were synthesized by the vertical
      Bridgman method. XRD analysis and structural study of the Sb2Se3-GaSe
      eutectics showed that Sb2Se3 inclusions were uniformly distributed in
      the GaSe matrice. Three eutectic points in the Sb2Se3-GaSe system were
      studied. The compositions of the three eutectics of 80, 55 and 40 wt.%
      Sb2Se3 formed in the Sb2Se3-GaSe systems, and the corresponding melting
      points of 776, 725 and 698 K were determined. Anisotropy of the
      electrical properties of the eutectic systems was observed. The
      anisotropy degree was ~103 depending on the crystallization direction.
KW  - XRD
KW  - SEM and EDX analysis
KW  - differential scanning calorimetry
KW  - Raman spectra
KW  - eutectic system
ER  -