Semiconductor Physics, Quantum Electronics & Optoelectronics, 28 (2), P. 134–141 (2025).
DOI: https://doi.org/10.15407/spqeo28.02.134


Origin of ferroelectric-like orthorhombic phase in oxygen-deficient HfO2–y nanoparticles

E.A. Eliseev1, I.V. Kondakova1, Yu.O. Zagorodniy1, H.V. Shevliakova2, O.V. Leshchenko1, V.N. Pavlikov1, L.P. Yurchenko1, M.V. Karpets1, and A.N. Morozovska3

1I. Frantsevich Institute for Problems in Materials Science, National Academy of Sciences of Ukraine, Kyiv, Ukraine
2Department of Microelectronics, National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”, Kyiv, Ukraine
3Institute of Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
Corresponding author e-mail: eugene.a.eliseev@gmail.com; anna.n.morozovska@gmail.com

Abstract. In this work, the relationship between the crystalline structure symmetry, concentration of point defects and possible appearance of ferroelectric-like polarization in HfO2–y nanoparticles was established. The X-ray diffraction and electron paramagnetic resonance analyses revealed the formation of ferroelectric-like orthorhombic phase in oxygen-deficient HfO2–y nanoparticles (pure and doped with rare-earth element yttrium ones). Density functional theory (DFT) calculations showed that small HfO2 nanoparticles may become polar, especially in the presence of impurity atoms and/or oxygen vacancies. To explain the experimental results, we modified the effective Landau–Ginzburg–Devonshire (LGD) model using the parameterization approach, focusing on the Landau expansion coefficients associated with polar and antipolar orderings, which agrees with the performed DFT calculations. The effective LGD model may be useful for developing silicon-compatible ferroelectric nanomaterials based on
HfxZr1–xO2–y.

Keywords: nanoparticles, hafnium oxide, oxygen vacancies, rare-earth element doping, ferroelectric-like polar phase, silicon-compatible ferroelectric nanomaterials.

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