Semiconductor Physics, Quantum Electronics & Optoelectronics, 28 (2), P. 142–146 (2025).
DOI: https://doi.org/10.15407/spqeo28.02.142
Stochastic resonance as a defect transformation mechanism in III-V semiconductor compounds under the action of electromagnetic and pulsed magnetic fields
G.V. Milenin1, R.A. Redko1,2
1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky Avenue, 03028 Kyiv, Ukraine
2State University of Information and Communication Technologies, 7, Solomenska str., 03110 Kyiv, Ukraine
*Corresponding author e-mail: milenin.gv@gmail.com; redko.rom@gmail.com
Abstract. The phenomenon of stochastic resonance of defects in III-V semiconductor compounds under the action of microwave radiation and pulsed magnetic fields has been discussed. The features of the resonant transformation of particle ensembles obeying statistical laws have been studied. The results have been applied to substantiate the observed changes in the surface morphology of III-V semiconductor compounds after pulsed magnetic field treatment. An estimation of the frequency of stochastic resonance has been provided.
Keywords: semiconductor, defect, microwave radiation, magnetic field, stochastic resonance.
This work is licensed under a Creative Commons Attribution‑NoDerivatives 4.0 International License.