Semiconductor Physics, Quantum Electronics & Optoelectronics, 28 (2), P. 175–182 (2025).
DOI: https://doi.org/10.15407/spqeo28.02.175
Dielectric losses in SiOx&FeyOz(Fe) nanocomposite films
A.A. Evtukh1,2, S.V. Antonin1*, A.I. Pylypov2, O.L. Bratus1
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Nauky Ave., 03028 Kyiv, Ukraine
2Educational and Scientific Institute of High Technologies, Taras Shevchenko National University of Kyiv, 64, Volodymyrska Street, 01601 Kyiv, Ukraine
*Corresponding author: e-mail: antoninsv@gmail.com
Abstract. Studies of the dielectric behavior of nanocomposite films are critical for a better understanding of electromagnetic wave absorption. This work presents results on investigating dielectric losses in nanocomposite SiOx&FeyOz(Fe) films. The films with different compositions were obtained using the physical ion-plasma sputtering method. The dielectric losses have been studied within the frequency range of 5 kHz…5 MHz. The dielectric losses have been studied within the frequency range of 5 kHz…5 MHz. The decrease of the dielectric losses of the applied signal with the frequency and their increase with the voltage have been demonstrated. The content of SiOx&FeyOz(Fe) nanocomposite films and high-temperature annealing significantly influence the dielectric losses. The highest dielectric losses have been observed for the initial FeyOz films. In the case of annealed films, the highest dielectric losses were observed when the ratio Fe:Si of iron and silicon areas of the sputtering target were equal to 1:2 and 1:1. The ascertained results have been explained using the phenomenon of space charge polarization in phase interfaces.
Keywords: nanocomposite films, dielectric losses, polarization, frequency, voltage, ion-plasma deposition, annealing.
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