TY  - JOUR
T1  - Stochastic resonance as a defect transformation mechanism in III-V semiconductor compounds under the action of electromagnetic and pulsed magnetic fields
AU  - Milenin, G.V.
AU  - Redko, R.A.
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 28
IS  - 2
SP  - 142
EP  - 146
PY  - 2025
DO  - 10.15407/spqeo28.02.142
UR  - https://doi.org/10.15407/spqeo28.02.142
AB  - The phenomenon of stochastic resonance of defects in III-V semiconductor compounds under the action of microwave radiation and pulsed magnetic fields has been discussed. The features of the resonant transformation of particle ensembles obeying statistical laws have been studied. The results have been applied to substantiate the observed changes in the surface morphology of III-V semiconductor compounds after pulsed magnetic field treatment. An estimation of the frequency of stochastic resonance has been provided.
KW  - semiconductor
KW  - defect
KW  - microwave radiation
KW  - magnetic field
KW  - stochastic resonance
ER  -