@article{Tyagulski2025_232,
  author = {Tyagulski, I.P. and Gudymenko, O.Yo. and Rusavsky, A.V. and Tiagulskyi, S.I. and Isaieva, O.F. and Kondratenko, S.V. and Lysenko, V.S. and Flandre, D. and Nazarov, A.N.},
  title = {Flash lamp annealing of Cu(In1-xGax)SSe films deposited on polyimide substrate: Crystalline structure and chemical composition},
  journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics},
  year = {2025},
  volume = {28},
  number = {2},
  pages = {232--238},
  doi = {10.15407/spqeo28.02.232},
  url = {https://doi.org/10.15407/spqeo28.02.232},
  abstract = {In this paper, the effect of sub-millisecond range flash lamp annealing (FLA) on the microstructural and chemical composition of copper indium gallium selenide sulfide (CIGSS) films deposited at low temperature (below 350 °C) on flexible polyimide was studied. The results of scanning electron microscopy (SEM), X-ray diffraction (XRD), and micro-Raman spectroscopy indicate that flash lamp annealing leads to a more homogeneous polycrystalline structure and reduces the defect concentration in the CIGSS layer. Additionally, energy-dispersive X-ray spectroscopic (EDS) measurements show that copper concentration slightly increases, with a slight decrease in the concentration of Ga and In.},
  keywords = {flash lamp annealing, scanning electron microscopy, X-ray diffraction, micro-Raman spectroscopy}
}