TY  - JOUR
T1  - Flash lamp annealing of Cu(In1-xGax)SSe films deposited on polyimide substrate: Crystalline structure and chemical composition
AU  - Tyagulski, I.P.
AU  - Gudymenko, O.Yo.
AU  - Rusavsky, A.V.
AU  - Tiagulskyi, S.I.
AU  - Isaieva, O.F.
AU  - Kondratenko, S.V.
AU  - Lysenko, V.S.
AU  - Flandre, D.
AU  - Nazarov, A.N.
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 28
IS  - 2
SP  - 232
EP  - 238
PY  - 2025
DO  - 10.15407/spqeo28.02.232
UR  - https://doi.org/10.15407/spqeo28.02.232
AB  - In this paper, the effect of sub-millisecond range flash lamp annealing (FLA) on the microstructural and chemical composition of copper indium gallium selenide sulfide (CIGSS) films deposited at low temperature (below 350 °C) on flexible polyimide was studied. The results of scanning electron microscopy (SEM), X-ray diffraction (XRD), and micro-Raman spectroscopy indicate that flash lamp annealing leads to a more homogeneous polycrystalline structure and reduces the defect concentration in the CIGSS layer. Additionally, energy-dispersive X-ray spectroscopic (EDS) measurements show that copper concentration slightly increases, with a slight decrease in the concentration of Ga and In.
KW  - flash lamp annealing
KW  - scanning electron microscopy
KW  - X-ray diffraction
KW  - micro-Raman spectroscopy
ER  -