TY  - JOUR
TI  - Influence of nonthermal effects of microwave and pulsed magnetic fields
      on radiative recombination centers in SiC/por-SiC/Er2O3 structures
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
AU  - O.B. Okhrimenko
AU  - O.F. Kolomys
AU  - V.V. Strelchuk
AU  - A.G. Zhuk
AU  - Z.V. Maksimenko
AU  - G.M. Androsiuk
AU  - Yu.Yu. Bacherikov
VL  - 29
IS  - 2
SP  - 146
EP  - 152
PY  - 2026
DA  - 2026
AB  - In this paper, the effect of short-term nonthermal exposure to microwave
      radiation and pulsed magnetic field (PMF) on photoluminescence
      characteristics of SiC/por-SiC/Er2O3 structures has been
      considered. Analysis of the photoluminescence spectra of these
      structures has shown that the changes observed in the spectra
      under microwave and PMF exposure are explained by an increase in
      the migration mobility of dislocations, which in turn leads to a
      redistribution of recombination centers in the SiC/por-SiC/Er2O3
      structure. The influence of PMF on the processes of redistribution
      of recombination centers in the SiC/por-SiC/Er2O3 structure has
      been shown more effective than microwave exposure. The mechanisms
      of action of both microwave radiation and PMF are considered to be
      those leading to increase in the migration ability of dislocations
      due to change in the internal state of interacting dislocations
      and lattice defects.
KW  - nonthermal microwave action
KW  - pulsed magnetic field
KW  - photoluminescence
KW  - buffer porous layer
KW  - erbium oxide
KW  - silicon carbide
DO  - 10.15407/spqeo29.02.146
UR  - http://journal-spqeo.org.ua/n2_2026/v29n2-p146-152.pdf
ER  -