@article{spqeo29n2p162,
  author = {Ya.Ya. Kudryk and V.V. Strelchuk and D.M. Maziar and A.E. Belyaev and T.V. Kovalenko and A.V. Marchenko and V.V. Lysakovskyi and S.O. Ivakhnenko and M.M. Dub and P.O. Sai and W. Knap and A.S. Nikolenko},
  title = {Influence of growth-sector structure on electrical characteristics of Schottky and ohmic contacts to boron-doped HPHT diamond},
  journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics},
  year = {2026},
  volume = {29},
  number = {2},
  pages = {162--171},
  doi = {10.15407/spqeo29.02.162},
  url = {http://journal-spqeo.org.ua/n2\_2026/v29n2-p162-171.pdf},
  abstract = {Influence of growth-sector structure on electrical characteristics of Schottky diodes and ohmic contacts fabricated on boron-doped high-pressure high-temperature (HPHT) growth diamond was investigated by correlating electrical measurements with μ-FTIR mapping of uncompensated boron concentration. The studied substrates exhibited pronounced multisectoral inhomogeneity of electrically active boron with systematic variation between the principal growth sectors. The Schottky structures revealed two characteristic transport regimes. In the lower-doped regions, the reverse current was mainly controlled by localized shunting defects, whereas in the higher-doped regions it increased strongly with uncompensated boron concentration and the contacts gradually changed their behavior from rectifying to nearly ohmic one, consistent with increasing contribution of tunneling-assisted transport. The specific contact resistance of the Ti/Pt/Au ohmic contacts decreased with the boron concentration and exhibited clear dependence on growth-sector affiliation. At comparable uncompensated boron concentrations, the contacts formed in the (001) and (113) sectors exhibited lower specific contact resistance than those formed in the (111) sector. The results demonstrate that the growth-sector structure of the boron-doped HPHT diamond influences not only spatial distribution of electrically active boron, but also transport characteristics of metal/diamond contacts therefore representing an important technological factor in fabrication and optimization of diamond-based electronic devices.},
  keywords = {Schottky barrier, ohmic contact, wide-gap semiconductor, diamond, current-voltage characteristics},
}