TY  - JOUR
T1  - Temperature-dependent charge accumulation and current-voltage characteristics of Ag7–x(PxGe1–x)S5I superionic heterostructures for solid-state energy devices
AU  - Bilanych, V.S.
AU  - Slyvka, A.A.
AU  - Vorobiov, S.I.
AU  - Pogodin, A.I.
AU  - Malakhovska, T.O.
AU  - Mohylyuk, I.M.
AU  - Komanicky, V.
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 29
IS  - 2
SP  - 191
EP  - 202
PY  - 2026
DO  - 10.15407/spqeo29.02.191
UR  - https://doi.org/10.15407/spqeo29.02.191
AB  - The work investigates temperature-dependent charge accumulation and relaxation processes, as well as the current-voltage characteristics of Ag|Ag7–x(PxGe1–x)S5I|Se heterostructures with different Ge/P ratios. The current-time dependences I(t) were studied in a potentiostatic mode (0.4 V, 600 s) followed by discharge (0 V, 600 s) at 20 °C and 60 °C. It is shown that the relaxation is described by a bi-exponential model with time constants τ1 and τ2, corresponding to fast interfacial and slow diffusion processes, respectively. It was established that with increasing temperature, the relaxation times decrease due to the activation of Ag+ ion transport and the softening of selenium. Arrhenius analysis revealed different activation energies for the fast (~ 0.1…0.3 eV) and slow (~ 0.05…0.15 eV) processes. The current-voltage characteristics exhibit nonlinear and asymmetric behavior with current maxima associated with interfacial polarization and the formation of Ag2Se. The minimum relaxation times are observed for the composition Ag6.5P0.5Ge0.5S5I.
KW  - superionic conductors
KW  - argyrodite structure
KW  - Ag7–x(PxGe1–x)S5I
KW  - solid electrolyte heterostructures
KW  - charge-discharge processes
KW  - interfacial polarization
KW  - solid-state electrochemical devices
ER  -