Semiconductor Physics, Quantum Electronics and Optoelectronics, 2 (2) P. 050-053 (1999).


References

1. L. T. Canham. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers // Appl. Phys. Lett. 57, p. 1046-1048 (1990).
https://doi.org/10.1063/1.103561
2. M. A. Tischler, R. T. Collins, J. H. Stathis, and J. C. Tsang. Luminescence degradation in porous silicon // Appl. Phys. Lett. 60, p. 639-641 (1992).
https://doi.org/10.1063/1.106578
3. T. Maruyama and S. Ohtani. Photoluminescence of porous silicon exposed to ambient air // Appl. Phys. Lett. 65, p. 1346-1348 (1994).
https://doi.org/10.1063/1.112047
4. C.-H. Lin, S.-C. Lee, and Y.-F. Chen. Morfologies and photoluminescence of porous silicon under different etching and oxidation conditions // J. Appl. Phys. 75, p. 7728-7736 (1994).
https://doi.org/10.1063/1.356604
5. R. Sabet-Dariani, N. S. McAlpine, and D. Haneman. Electroluminescence in porous silicon // J. Appl. Phys. 75, p. 8008-8011 (1994).
https://doi.org/10.1063/1.356539
6. S. Banerjee, K. L. Narasimhan, and A. Sardesai. Role of hydrogen- and oxygen-terminated surfaces in the luminescence of porous silicon // Phys. Rev. B. 49, p 2915-2918 (1994).
https://doi.org/10.1103/PhysRevB.49.2915
7. A. Bsiesy, J. C. Vial, F. Gaspard, R. Herino, V. Ligeon, F. Muller, R. Romestain, A. Wasiela, A. Halimaoui, and G. Bomchil. Photoluminescence of high porosity and of electrochemically oxidized porous silicon layers // Surf. Sci. 254, p. 195-200 (1991).
https://doi.org/10.1016/0039-6028(91)90652-9
8. V. P. Bondarenko, A. M. Dorofeev, V. I. Levchenko, A. I. Lukomskiy, L. I. Postnova. Method of control of porous silicon luminescence parameters in the visible // Pisjma v Zhurn. Tekh. Fiz. (Russ. Tech. Phys. Lett.) 20, p. 61-65 (1994).
9. V. A. Makara, V. A. Odarych, O. V. Vakulenko, and O. I. Dacenko. Ellipsometric studies of porous silicon // Thin Solid Films 342, p. 230-237 (1999).
https://doi.org/10.1016/S0040-6090(98)01163-8
10. O. I. Dacenko, V. A. Makara, S. M. Naumenko, T. V. Ostapchuk, O. V. Rudenko, V. B. Shevchenko, O. V. Vakulenko, and M. S. Boltovets. Evolution of the porous silicon sample properties in the atmospheric ambient // J. Luminescence 81, p. 263-270 (1999).
https://doi.org/10.1016/S0022-2313(99)00012-5
11. V. A. Makara, M. S. Boltovets, O. V. Vakulenko, O. I. Dacenko, S. M. Naumenko, T. V. Ostapchuk, and O. V. Rudenko. Peculiarities of porous silicon photoluminescence after chemical etching in HF // Zurn. Prikl. Spetrosc. (Belorus. J. Appl. Spectrosc.) 66, p. 423-427 (1999).
https://doi.org/10.1007/BF02676782
12. I. A. Buyanova, I. Ya. Gorodetsky, N. E. Korsunskaya, T. N. Mel’nik, I. M. Rarenko, A. U. Savchuk, and M. K. Sheynkman. Sensitized luminescence of porous silicon and its polarization characteristics // Fiz. Tekh. Polupr. (Russ. Phys. and Tech. of Semicond.) 30, p. 1516-1524 (1996).
13. V. A. Makara, O. V. Vakulenko, O. I. Dacenko, V. M. Kravchenko, T. V. Ostapchuk, O. V. Rudenko, M. S. Boltovets, V. O. Fesunenko. Effect of boron diffusion doping of silicon on the micromechanical and luminescence properties of porous layers // Thin Solid Films 312, p. 202-206 (1998).
https://doi.org/10.1016/S0040-6090(97)00332-5
14. I. M. Chang, S. C. Pan, and Y. F. Chen. Light-induced degradation on porous silicon, Phys.Rev.B. 48, p. 8747-8750 (1993).
https://doi.org/10.1103/PhysRevB.48.8747
15. K. S. Zhuravlev, N. P. Stepina, T. S. Shamirzaev, E. Yu. Buchin, N. E. Mokrous. Decay and rise kinetics of porous silicon photoluminescence under continuous laser radiation // Fiz. Tekh. Polupr. (Russ. Phys. and Tech. of Semicond.) 28, p. 482-487 (1994).
16. P. K. Kashkarov, E. A. Konstantinova, and V. Yu. Timoshenko. Mechanisms of molecule adsorbtion effect on the recombination processes in porous silicon // Fiz. Tekh. Polupr. (Russ. Phys. and Tech. of Semicond.) 30, p. 1479-1489 (1996).
17. V. G. Golubev, A. V. Zherzdev, G. K. Moroz, A. V. Patsekin, and D. T. Yan. Strong photoinduced increase of photoluminescence intensity of anodically oxidized porous silicon // Fiz. Tekh. Polupr. (Russ. Phys. and Tech. of Semicond.) 30, p. 852-863 (1996).