References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 3 (3) P. 343-348 (2000).

References

1. M. Lannoo, J. Bourgoin. Points defects in Semiconductors I // Berlin: Springer Verlag, 263 p. (1981). https://doi.org/10.1007/978-3-642-81574-4

2. K. Terashima, J. Nishio, A. Okada, S. Washizuna, M.Watanabe. Stoichiometry of undoped LEC GaAs // J. Cryst.Growth, 79, pp.463-468(1986). https://doi.org/10.1016/0022-0248(86)90478-1

3. N.F. Chen, H. He, Y.Wang, L. Lin. Stoichiometryc defects in semi-insulating GaAs // J. Cryst. Growth, 173, pp. 325-329(1997). https://doi.org/10.1016/S0022-0248(96)00823-8

4. L.A. Charniy, A.N. Morozov, V.T. Bublik, K.D. Scherbachev, I.L. Stepantsova, V.M. Kaganer. Study of microdefects and their distribution in dislocation-free Si-doped HB GaAs by X-ray diffuse scattering on triple-crystal diffractometer // J. Cryst. Growth, 118, pp. 163-175 (1992). https://doi.org/10.1016/0022-0248(92)90061-M

5. G. Frigerio, C. Mucchino, J.L. Weyhev L., Zanotti, C. Paorici. Dislocations and microdefects in LEC-grown silicon-doped gallium arsenide crystals // J. Cryst. Growth, 99, pp. 685-691(1990). https://doi.org/10.1016/S0022-0248(08)80007-3

6. I. Fujimoto. Structural aspects of non-stoichiometry and heavy doping of GaAs // Materials Science and Engineering, B14,pp. 426-438 (1992). https://doi.org/10.1016/0921-5107(92)90087-P

7. I. Fujimoto. Characterisation of stoichiometry in GaAs by X-Ray intensity measurements of quasi-forbidden reflections // Jap. J. Appl. Phys., 23(5), pp. L287-L289 (1984). https://doi.org/10.1143/JJAP.23.L287

8. L.I. Datsenko, V.P. Klad'ko, V.M. Mel'nik, V.F. Machulin. Osobennosti tolshchinnyh oscilliacij intensivnosti pri rasseianii rentgenovskih luchej vblizi K-kraia pogloshcheniia galliia dlia kvazizapreshchennyh otrazhenij // Metallofizika I novejshie tehnologii, 21(8), pp. 46-54 (1999).

9. V.P. Klad'ko, L.I. Datsenko, V.F. Machulin. Vplyv defektiv struktury v GaAs na harakter laye-dyfrakcii rentgenivs'kyh promeniv z dovzhynamy hvyl', blyz'kymy do K-kraiv poglynannia atomiv pidgratok // Ukrains'kyi fizichnyi zhurnal,44(9), pp. 1148-1154 (1999).

10. V.G. Bar'iahtar, A.N. Gureev, V.V. Kochelab, V.B. Molodkin, S.I. Olihovskij, M.E. Osinovskij. Polnoe integral'noe breggotrazhenie rentgenovskih luchej i opredelenie strukturnogo sovershenstva real'nyh monokristallov // Metallofizika, 11(3),pp. 73-81 (1989).

11. V.B. Molodkin, S.I. Olihovskij, E.N. Kislovskij, V.P. Krivickij, A.V. Los', E.V. Pervak, Dzh.E. Ajs, B.K. Larson Interpretaciia krivyh otrazheniia monokristallov s mikrodefektami v sluchae dinamicheskoj difrakcii rentgenovskih luchej po Breggu // Metallofizika i novejshie tehnologii, 19(12), pp. 25-34 (1997).

12. V.P. Klad'ko, L.I. Datsenko L.I., S.J. Olihovs'kij S.J., V.F. Machulin, I.V. Prokopenko. Analiz nestehiometrii I harakterystyk mukrodefektiv pry dyfrakcii rentgenivs'kih promeniv po Bregu // Naukovij visnyk Chernivets'kogo universitetu. Fizyka. Elektronika, 6, pp. 28-38 (1999).

13. P.H. Dederichs. Diffuse scattering from defect clusters near Bragg reflections // Phys. Rev(b).,4(1), pp. 1041-1050 (1971). https://doi.org/10.1103/PhysRevB.4.1041

14. E. Brugren, O. Efimov, E. Person. Opredelenie effektivnoj velichiny «spektral'nogo okna» rentgenovskogo kristall -spektrometra. // Fizika tviordogo tela, 10(9), pp. 2716-2723(1968).

15. T. Fukamachi, S. Hosoya, T. Kawamura, M. Okunuko. X-Ray Intensity Measurements on Large Crystals by Energy-Dispersive Diffractometry. Preprint of the Institute for Sol.Stat. Phys. the University of Tokyo. Tokyo. N760. 20p. (1976)

16. D.T. Cromer. Anomalous dispersion corrections computed from self-consistent field relativistic Dirac-Slater wave function // Acta Cryst., 18, pp. 17-23 (1965). https://doi.org/10.1107/S0365110X6500004X

17. U. Pietsch. X-ray structure amplitudes for GaAs and InP // Phys. Stat. Sol.(A), 87, pp. 151-156 (1985). https://doi.org/10.1002/pssa.2210870113

18. H.M. Rietveld. A profile refinement method for nuclear and magnetic structures // J. Appl. Cryst., 2(2), pp. 65-72 (1969). https://doi.org/10.1107/S0021889869006558

19. A.N. Baranov, T.I. Voronina, T.S. Lagunova, M.A. Sipovskaia, V.V. Sherstnev, Yu.P. Iakovlev. Svojstva epitaksial'nogo arsenida indiia, legirovannogo redkozemel'nymi elementami // Fizika i tehnika poluprovodnikov, 27(2), pp. 421-429 (1993).

20. Yu.A. Thorik, L.S. Hazan. Plasticheskaia deformaciia I dislokacii nesootvetstviia v geteroepitaksial'nyh sistemah.Kiev, Naukova dumka, 304 p. (1983).