Semiconductor Physics, Quantum Electronics and Optoelectronics, 3 (3) P. 394-399 (2000).
References
1. M.T. Kostishin, E.V. Mikhailovskaya, P.F. Romanenko and G.A.Sandul, // About the photographic sensitivity of the thin semiconductor layers // J.Sci.Appl.Photogr.Sinematogr.,10,I.6. pp. 450-451, 1965.
2. K . Tanaka, Photoinduced structural changes in amorphous semiconductors Physics and Technics of Semiconductors // 32, I8, pp.964-969, 1998. https://doi.org/10.1134/1.1187473
3. S.A. Solin, G.N. Papatheodorou, Irreversible thermostructural transformations in amorphous As3S3 films: A lightscattering study // Phys.Rev.B., 15, N4, pp. 2084-2090, 1977. https://doi.org/10.1103/PhysRevB.15.2084
4. T.K.Zvonareva, B.T.Kolomiets, V.M.Lyubin, V.A.Fedorov, Photostimulated changes of optical properties and recording of optical information in vitreous films of As-S system // Journal of Technical Physics, 48, N5, pp. 1021-1025, 1978.
6. M.T. Kostishin, O.P. Kasyarum, Interrelation of dispersion and photostructural changes in arsenic trisulphide films (in Rassian) // Ukrainskiy Fizicheskiy Zhournal, 27, N2, pp. 297-299, 1982.
7. E. Hajto, P.J.S. Ewen, R. Belford, et al., Optical properties of spin-coated amorphous thin films // J.Non-Cryst.Sol.,97&98,Pt.II, pp. 1191-1194, 1987. https://doi.org/10.1016/0022-3093(87)90284-5
8. K. White, B.Kumar and A.K.Rai, Effect of deposition rate on structure and properties of As2S3film // Thin Solid Films,161, pp. 139-147, 1988. https://doi.org/10.1016/0040-6090(88)90245-3
9. E.Marquez, J.B.Ramirez-Malo, P.Villares, et al., Optical characterization of wedge-shaped thin films of amorphous arsenic trisulphide based only on their shrunk transmission spectra // Thin Solid Films, 254, N1, pp. 83-91, 1995. https://doi.org/10.1016/0040-6090(94)06267-O
10. A. Stronski, M. Vlèek, A. Sklenaø, Imaging technology on the base of As38S62 thin layers // Proc.SPIE, «OPTIKA-98,5th Congress on Modern Optics», Ed. G.Akos, G.Lupkovics, A.Podmaniczky, 3573,pp. 401-404, 1998. https://doi.org/10.1117/12.324551
11. J.M. Gonzalez-Leal, E. Marquez, A.M. Bernal-Oliva, J.J. Ruiz-Perez, R. Jimemez-Garay, Derivation of the optical constants of thermally-evaporated uniform films of binary chalcogenide glasses using only their reflection spectra // Thin Solid Films,317, pp. 223-227, 1998. https://doi.org/10.1016/S0040-6090(97)00519-1
12. A.V. Stronski, M. Vlèek, J. Prokop, T. Wagner, P.J.S. Ewen, S.A. Kostioukevitch, and P.E. Shepeljavi, As-S thin film inorganic resists and some their applications in diffractive optics // In : «Diffractive Optics», Materials of European Optical Society Meeting , Savonlina, Finland, 12, pp. 194-195, 1997.
14. P.E. Shepeljavi, S.A .Kostioukevitch, I.Z. Indutnyi and A.V. Stronski, Fabrication of periodical structures with the help of chalcogenide inorganic resists // In: «Integrated Optics and Microstructures II», Tabib-Azar M.,Polla D.L., Wong K.K.-Editors.-SPIE Proc, 2291, 188-192, 1994. https://doi.org/10.1117/12.190907
15. I.Z. Indutnyi, A.V. Stronski, S.A. Kostioukevitch, P.E. Schepeljavi, P.F. Romanenko, I.I. Robur, Holographic optical element fabrication using chalcogenide layers // Optical Engineering, 34, N4. pp. 1030-1039, 1995. https://doi.org/10.1117/12.197144
16. R . Swanepoel, Determining refractive index and thickness of thin films from wavelength measurements only // J.Opt.Soc.Amer, 2, N8, pp. 1339-1343, 1985. https://doi.org/10.1364/JOSAA.2.001339
17. S.H. Wemple, Refractive - Index Behaviour of Amorphous Semiconductors and Glasses // Phys. Rev, B77, N8, pp. 3767-3777, 1973. https://doi.org/10.1103/PhysRevB.7.3767
18. G . Lucovsky, Structural interpretations of the infrared and Raman spectra of amorphous semiconductors // In: Proc. Of 5th . Conf. of Amorph. and Liquid Semicond, London, 1974, pp. 1099-1120, 1973.
19. O.I. Shpotyuk On the mechanism of reversible radiation-structural transformations in chalcogenide vitreous semiconductors // Journal of Applied Spectroscopy, 59, N5-6, pp.550-553,1996. https://doi.org/10.1007/BF00664938
20. P.J.S. Ewen, M.J. Sik and A.E. Owen, A note on the Raman spectra and structure of AsxS100-x(x≥ 40) glasses // Solid State Communications, 33, N7-12, pp. 1067-1070, 1980. https://doi.org/10.1016/0038-1098(80)90319-1
21. R. Shuker and R.W. Gammon, Raman-scattering selectionrule breaking and the density of states in amorphous materials // Phys.Rev.Lett, 25, N4, pp. 222-225, 1970. https://doi.org/10.1103/PhysRevLett.25.222
22. T.Wagner, S.O. Kasap, M. Vlèek, A.Sklenaø, A.Stronski, The structure of AsxS100-x glasses studied by temperature-modulated differential scanning calorimetry and Raman spectroscopy // J.Non-Cryst.Solids, 227-230, pp. 752-756,1988. https://doi.org/10.1016/S0022-3093(98)00194-X
23. T. Wagner, S.O. Kasap, M. Vlèek, A. Sklenaø, A. Stronski, Modulated-temperature differential scanning calorimetry and Raman spectroscopy studies of AsxS100-x glasses // Journal of Materials Science, 33, I.23, pp. 5581-5588, 1988. https://doi.org/10.1023/A:1004455929749
25. F. Kosek, Z. Cimpl, J. Tulka and J. Chlebny, New analytic method for investigation of the distribution of bonds in As-S system // J.Non-Cryst.Solids, 90, N113, pp. 401-404, 1987. https://doi.org/10.1016/S0022-3093(87)80450-7
26. V.I. Mikla, Photoinduced structural changes and related phenomena in amorphous arsenic chalcogenides // J.Phys.:Condens.Matter, 8, pp. 429-448, 1998. https://doi.org/10.1088/0953-8984/8/4/009
28. H . Fritzsche, The origin of reversible and irreversible photostructural changes in chalcogenide glasses // Phil.Mag,68, N4, pp. 561-572, 1993. https://doi.org/10.1080/13642819308217935
29. S.A. Zenkin, S.B. Mamedov, M.D. Mikhailov, E.Yu. Turkina and I.Yu.Yusupov, Mechanism for Interaction of amine solutions with monolithic glasses and amorphous films in the As-S system // Glass Physics and Chemistry, 23, N5, pp. 393-399,1997.