https://doi.org/10.15407/spqeo4.03.152
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 3. P. 152-155.
PACS: 61.82.F
Influence of neutron irradiation on elctrooptical and structural properties of silicon
A.A. Groza 1, E.F. Venger 2, V.I. Varnina 1, R.Yu. Holiney 2, P.G. Litovchenko 1, L.A. Matveeva 2, A.P. Litovchenko 1, M.I. Starchik 1,
V.I. Sugakov 1, G.G. Shmatko 1
1Scientific Center Institute for Nuclear Research of the National Academy of Science of Ukraine
2Institute of semiconductor physics of the NAS of Ukraine
Abstract. Processes of structure defects formation, which accompanied by oxygen precipitation after a neutron irradiation (1015- 1019 n/cm2) and high-temperature treatment (800 - 1000°С) in CZ silicon, were investigated by the transmission electron microscopy. Influence of the structure defects on electrooptical properties of silicon was revealed.
Keywords: silicon, neutron irradiation, oxygen precipitates, electrooptical properties.
Paper received 29.03.01; revised manuscript received 12.04.01; accepted for publication 13.07.01.
Full text in PDF (Portable Document Format) [PDF 191K]
p>
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.