Influence of structural defects on photoconductivity of zinc diphosphide

Semiconductor Physics, Quantum Electronics & Optoelectronics, 4 (3), P. 156-158 (2001)
https://doi.org/10.15407/spqeo4.03.156

Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 3. P. 156-159.

PACS 61.72

Influence of structural defects on photoconductivity
of zinc diphosphide

A.P. Kudin, V.I. Kuts, P.G. Litovchenko, M.B. Pinkovska, V.P. Tartachnyk

The Scientific Center Institute for Nuclear Research, National Academy of Sciences of Ukraine, 47 Pr. Nauky, 03028 Kyiv, Ukraine
E-mail: interdep@kinr.kiev.ua Fax: 380 44 2654463

Abstract. Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied.
It is supposed that band hn = 1.65 eV responses to clusters of defects existing in initial crystals. Complex defects appearing during high temperature treatment (400^oC) form band hn = 1.55-2.14 eV. Irradiation leads to the decrease of dark current and appearing of acceptor type level which can be annealed in the temperature interval 20-100⁰C.

Keywords: radiation defects, g-irradiation, photoconductivity.

Paper received 26.01.01; revised manuscript received 05.03.03; accepted for publication 13.07.01.

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